absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 800 v i t(rms) r.m.s on-state current t c = 79 c 12 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 119/130 a i 2 t i 2 t 71 a 2 s p gm peak gate power dissipation 5.0 w p g(av) average gate power dissipation 0.5 w i gm peak gate current 2.0 a v gm peak gate voltage 10 v v iso isolation breakdown voltage(r.m.s.) a.c. 1 minute 1500 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 2.0 g feb, 2003. rev. 0 features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 12 a ) high commutation dv/dt isolation voltage ( v iso = 1500v ac ) general description this device is fully isolated pa ckage suitable for ac switching application, phase control app lication such as fan speed and temperature modulation control, lighting control and static switching relay. this device is approved to comply with applicable require- ments by underwriters laboratories inc. 2.t2 3.gate 1.t1 symbol 1/6 STF12A80 semiwell semiconductor bi-directional triode thyristor copyright@semiwell semic onductor co., ltd., all rights reserved. ul : e228720 to-220f 1 2 3
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 2.0 ma v tm peak on-state voltage i t = 20 a, inst. measurement 1.4 v i + gt1 gate trigger current v d = 6 v, r l =10 30 ma i - gt1 30 i - gt3 30 v + gt1 gate trigger voltage v d = 6 v, r l =10 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -6.0 a/ms, v d =2/3 v drm 10 v/ ? i h holding current 20 ma r th(j-c) thermal impedance junction to case 3.3 c/w STF12A80 2/6
-50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v gt (t o c) v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 50 100 150 200 60hz 50hz surge on-state current [a] time (cycles) 02468101214 70 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 02468101214 0 2 4 6 8 10 12 14 16 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2a) 25 p g (av) (0.5w) p gm (5w) v gm (10v) gate voltage [v] gate current [ma] 3/6 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle STF12A80
-50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 transient thermal impedance [ o c/w] time (sec) 4/6 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit a v 10 ? 6v r g a v 10 ? 6v r g a v 10 ? 6v r g test procedure test procedure test procedure STF12A80
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 13.47 13.73 0.530 0.540 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 5/6 2 STF12A80
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 8.4 8.66 0.331 0.341 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.25 1.55 0.049 0.061 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.024 0.039 p 5.0 0.197 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension, forming 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2 p 6/6 STF12A80
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